THERMOELECTRIC MATERIAL AND THERMOELECTRIC MODULE

Provided is a thermoelectric material (1) having: a parent phase (10) containing a MgSiSn alloy as a main component; vacancies (12) formed in the parent phase (10); and a silicon layer which is formedon at least the wall surfaces of the vacancies (12) and contains silicon as a main component. The thermoelectric material (1) also contains 1.0-20.0 wt% of MgO. The silicon layer contains amorphous Si, or amorphous Si and a nano-sized Si crystal, and the parent phase (10) is composed of a region in which the composition ratio of Si in the chemical composition of the MgSiSn alloy is higher than the other regions, and a region in which the composition ratio of Sn is higher than the other regions. As a result, the thermoelectric material (1) has a lower electrical resistivity while having a lower thermal conductivity. 本发明提供一种热电材料(1)，所述热电材料(1)具有：母相(10)，以MgSiSn合金为主要成分；空孔(12)，形成于母相(10)中；以及硅层，至少形成于空孔(12)的壁面且以硅为主要成分。热电材料(1)还具有1.0wt％以上且20.0wt％以下的MgO。硅层包含非晶Si或者包含非晶Si和纳米尺寸的Si结晶，母相(10)由MgSiSn合金的化学组成的Si的组成比率比其他区域高的区域以及Sn的组成比率