ROW REDUNDANCY WITH DISTRIBUTED SECTORS

Techniques for flash memory with row redundancy are described herein. In an example embodiment, a semiconductor device comprises an embedded flash memory. The embedded flash memory comprises a memorybank that includes multiple physical sectors, where each physical sector comprises a plurality of erase sectors. In the memory bank, multiple portions of an additional erase sector are respectively distributed among the multiple physical sectors. The multiple portions of the additional erase sector are configured as a row-redundancy sector for the memory bank. 本文描述了用于具有行冗余的闪存的技术。在示例实施例中，半导体装置包括嵌入式闪存。嵌入式闪存包括包含多个物理扇区的存储体，其中每个物理扇区包含多个擦除扇区。在存储体中，附加擦除扇区的多个部分分别分布在多个物理扇区中。附加擦除扇区的多个部分被配置为用于存储体的行冗余扇区。