Sound wave device manufacturing method and sound wave device

The embodiment of the invention discloses a sound wave device manufacturing method and a sound wave device. The manufacturing method comprises the steps of forming a first electrode layer covering a first reflection structure, forming a protective layer covering the first electrode layer and the second reflection structure, the second reflection structure and the first reflection structure being arranged on the substrate in parallel, the first reflection structure being located in a first area of the substrate, and the second reflection structure being located in a second area of the substrate, forming a second electrode layer covering the protective layer, the thickness of the second electrode layer being different from that of the first electrode layer, and removing the protective layerabove the first electrode layer and the second electrode layer until to expose the first electrode layer. 本公开实施例公开了一种声波器件的制作方法及声波器件，所述制作方法包括：形成覆盖第一反射结构的第一电极层；形成覆盖所述第一电极层和第二反射结构的保护层；其中，所述第二反射结构和所述第一反射结构在衬底上并列排布，所述第一反射结构位于所述衬底的