Semiconductor Device and Manufacturing Method Thereof

The invention discloses a semiconductor device and a manufacturing method thereof. A semiconductor device according to an exemplary embodiment of the present invention includes: an n-type epitaxial layer arranged on the first surface of the substrate; a p-type region arranged on the n-type epitaxial layer; an n + type region which is arranged on the p-type region; a gate electrode which is arranged on the n-type epitaxial layer; an oxide film which is arranged on the gate electrode; a source electrode which is arranged on the oxide film and the n + type region; and a drain electrode which is arranged on the second surface of the substrate . The gate electrode includes a PN junction part. 本发明公开了半导体器件及其制造方法。根据本发明的示例性实施方式的半导体器件包括：n-型外延层，布置在衬底的第一表面上；p型区，布置在n-型外延层上；n+型区，布置在p型区上；栅极，布置在n-型外延层上；氧化膜，布置在栅极上；源电极，布置在氧化膜和n+型区上；以及漏电极，布置在衬底的第二表面上。栅极包括PN结部分。