Preparation method of CdS1-xSex alloy quantum dot sensitized photo-anode

The invention discloses a preparation method of a CdS1-xSex alloy quantum dot sensitized photo-anode. The method comprises the following specific operation steps: coating nanocrystalline slurry by adopting a silk-screen printing technology to prepare a mesoporous TiO2 nanocrystalline film; and preparing a CdS/TiO2 photo-anode on the mesoporous TiO2 nanocrystalline film by using an SILAR method, and then immersing the CdS/TiO2 photo-anode into a Na2SeSO3 solution to prepare the CdS1-xSex alloy QDs sensitized TiO2 nanocrystalline photo-anode. The method is simple in preparation process, low in cost, free of atmosphere protection and good in repeatability. Compared with a CdS sensitized photo-anode, the CdS1-xSex alloy QDs sensitized TiO2 nanocrystalline photo-anode prepared by adopting the method has the advantages that the absorption range of a spectrum can be expanded, the light absorption is enhanced, and the current density of a battery is improved. 本发明公开了一种CdSSe合金量子点敏化光阳极的制备方法，具体操作步骤如下：先采用丝网印刷技术涂覆纳米晶浆料制备介孔