Micro light-emitting diode capable of improving huge transfer yield
The present invention provides a micro light-emitting diode capable of improving a huge transfer yield. A first protective layer and a second protective layer coat the surface of a micro light-emitting diode to finish the micro light-emitting diode capable of improving the huge transfer yield. Parti...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The present invention provides a micro light-emitting diode capable of improving a huge transfer yield. A first protective layer and a second protective layer coat the surface of a micro light-emitting diode to finish the micro light-emitting diode capable of improving the huge transfer yield. Particularly, the micro light-emitting diode of which the surface is coated with the first protective layer and the second protective layer can show a relatively high tolerance degree of external stress. Therefore, when the single micro light-emitting diode is subjected to substrate transfer or the plurality of micro light-emitting diodes are subjected to mass transfer, the surface layer or other areas of the micro light-emitting diode cannot be deformed, broken or collapsed due to the action of external stress. Meanwhile, in order to prevent the first protective layer and the second protective layer from influencing normal light emitting of the micro light-emitting diode, the refractive index ofthe first protective lay |
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