Method for preparing crystal diode based on soluble protective film

The invention discloses a method for preparing a crystal diode based on a soluble protective film, which comprises the following steps: (1) substrate treatment: etching corresponding areas on the front surface and the back surface of a substrate to form an etching area, wherein the substrate comprises a substrate A and a substrate B; (2) attachment of a protective film: placing the plurality of paired substrates A and substrates B obtained in the step (1) on the protective film in a matrix arrangement form, and attaching the back surfaces of the substrates to the protective film; (3) preparation of a diode semi-finished product; (4) removing of the protective film: dissolving the protective film by adopting an organic solvent; and (5) preparation of a diode finished product: cutting the packaging layer into particles. According to the invention, through the design of pasting the protective film on the back surface of the substrate, the problem that the packaging adhesive permeates intothe back electrode of th