OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THEREOF

The invention provides an optoelectronic device and a method of manufacturing the same. The optoelectronic device includes: a layer disposed above a substrate, the layer having a first cavity therein,which cavity is at least partially defined by an inclined interface between the cavity and an insula...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GARDES FREDERIC YANNICK, GRABSKA KATARZYNA MONIKA
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides an optoelectronic device and a method of manufacturing the same. The optoelectronic device includes: a layer disposed above a substrate, the layer having a first cavity therein,which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0 DEG and less than or equal to 90 DEG; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0 DEG and less than or equal to 90 DEG. 本发明提供一种光电子器件及其制造方法。所述器件包括:设置在衬底之上的层,所述层在其中具有第一腔,所述腔至少部分地由所述腔与绝缘衬里之间的倾斜界面限定,所述界面相对于所述衬底以大于0°且小于或等于90°的角度设置;以及提供或形成波导的一部分的再生长半导体材料,所述再生长半导体材料至少部分地设置在所述第一腔中,并且包括所述再生长半导体材料与所述绝缘衬里之间的倾斜界面,所述界面相对于所述衬