Preparation method of ScAlN SAW resonator
The invention relates to a preparation method of an ScAlN SAW resonator. The method comprises the following steps: a, growing a ZnO buffer layer on a diamond substrate; b, growing an ScAlN piezoelectric layer on the ZnO/diamond layer; c, growing an Al electrode layer on the ScAlN/ZnO/diamond by adop...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a preparation method of an ScAlN SAW resonator. The method comprises the following steps: a, growing a ZnO buffer layer on a diamond substrate; b, growing an ScAlN piezoelectric layer on the ZnO/diamond layer; c, growing an Al electrode layer on the ScAlN/ZnO/diamond by adopting electron beam evaporation; d, forming a graphical photoresist mask on the surface of the Al electrode layer by adopting an electron beam exposure technology; e, forming an interdigital transducer (IDTs) on the surface of the Al electrode layer by adopting an etching technology; and f, strippingthe etched sample, and constructing the SAW resonator for testing and application. The ScAlN SAW resonator is constructed by controlling the crystal orientations of the ScAlN piezoelectric layer andthe ZnO buffer layer, controlling the thicknesses of the Al electrode layer, the ScAlN piezoelectric layer and the ZnO buffer layer and efficiently preparing an interdigital transducer (IDTs) structure through an etching means |
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