Semiconductor device and manufacturing method thereof

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a semiconductor substrate, wherein the semiconductor substrate comprises a conductive channel; a gate structure positioned on the conductive channel; wherein an anti-state doped region is arranged in the conductive channel corresponding to the gate structure, and the length of theanti-state doped region is smaller than that of the conductive channel. An asymmetric structure is formed by controlling doping in the conducting channel of the semiconductor device, the width of theconducting channel on one side of the drain electrode can be increased, an electric field on one side of the drain electrode is far away from the surface of the side of the drain electrode, and therefore the phenomenon of hot carrier injection is reduced. 本公开提供一种半导体器件及其制作方法。该半导体器件包括：半导体衬底，其中所述半导体衬底中包括导电沟道；以及栅极结构，位于所述导电沟道之上；其中所述栅极结构对应的所述导电沟道中设置有反态掺杂区，其中所述反态掺杂区的长度小于所述导电沟道的长度。本公开提供的半导体器件及其制作方法，通过对半导体器件的导电沟道中掺杂进行控制，形成非对称结构，可以扩