Damage-free high-planarity monocrystalline silicon carbide planar optical element and preparation method thereof
The invention discloses a damage-free high-planarity monocrystalline silicon carbide planar optical element and a preparation method thereof. The preparation method comprises the following steps: (1)selecting a whole single crystal silicon carbide crystal ingot with a zero micro-pipeline; (2) cuttin...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a damage-free high-planarity monocrystalline silicon carbide planar optical element and a preparation method thereof. The preparation method comprises the following steps: (1)selecting a whole single crystal silicon carbide crystal ingot with a zero micro-pipeline; (2) cutting the single crystal silicon carbide crystal ingot to obtain a rough blank; (3) carrying out double-sided grinding on the rough blank to obtain two parallel rough grinding surfaces; (4) polishing the two parallel rough grinding surfaces to obtain an optical mirror surface; and (5) carrying out chemical mechanical polishing on the optical mirror surface, removing a damaged layer of the mirror surface, and carrying out local finishing to obtain the damage-free high-planarity monocrystalline silicon carbide planar optical element.
本发明公开一种无损伤、高平面度单晶碳化硅平面光学元件及其制备方法。所述制备方法包括以下步骤:(1)挑选零微管道的整块单晶碳化硅晶锭;(2)对该单晶碳化硅晶锭进行切割,得到粗坯;(3)对粗坯进行双面研磨,得到两个平行的粗磨面;(4)对两个平行的粗磨面进行抛光,得到光学镜面;(5)对光学镜面进行化学机械抛光,去除镜面的损伤层,并进行局部修整,得到无损伤、高平面度单晶碳化硅平面光学元 |
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