SEMICONDUCTOR DEVICE

The embodiments provide a semiconductor device that can be miniaturized. The semiconductor device includes a first semiconductor layer of a first conductivity type; a first element including a first buried layer of a second conductivity type, at least a portion of the first element being formed on an upper layer portion of the semiconductor substrate; a second element including a second buried layer of the second conductivity type, at least a portion of the second element being formed on an upper layer portion of the semiconductor substrate; a first conductive member disposed between the firstelement and the second element in the semiconductor substrate, the upper end of the first conductive member being exposed on the upper surface of the semiconductor substrate, and the lower end of thefirst conductive member being located below the lower end of the first buried layer and the lower end of the second buried layer; and a first semiconductor region of the second conductivity type provided in the semiconductor