Memory device

A memory device includes a driver chip, a divider resistor, at least two noise suppression resistors, and at least three memory cells. One end of the divider resistor is electrically coupled to the voltage source, and the other end of the divider resistor is electrically coupled to the driver chip through the terminal of the connection path. One memory unit is electrically coupled to the divider resistor and the driving chip through the terminal of the connection path, and the at least two memory units are electrically coupled to the connection path through the noise suppression resistors respectively so as to be further electrically coupled to the driving chip. 一种存储器装置，包括：驱动芯片、分压电阻、至少两个杂讯抑制电阻以及至少三个存储器单元。分压电阻一端电性耦接于电压源，另一端通过连接路径的终端电性耦接于驱动芯片。其中的一个存储器单元通过连接路径的终端电性耦接于分压电阻及驱动芯片，且至少两个存储器单元分别通过一个杂讯抑制电阻电性耦接至连接路径上，以进一步电性耦接于驱动芯片。