Shared contact hole and etching defect detection method thereof

The invention discloses a shared contact hole etching defect detection method used in the manufacturing process of a semiconductor device, which comprises the following steps: a shared contact hole isformed in a semiconductor device, wherein an active region of the semiconductor device is arranged below the shared contact hole, and the shared contact hole is electrically isolated from a poly-silicon gate of the semiconductor device; and voltage contrast mode detection of electron beam scanning defect detection is performed on the shared contact hole to judge whether there is an etching defector not. According to the technical scheme provided by the invention, the problems of long feedback time and insufficient sensitivity of contact hole etching process window monitoring in the existingmonitoring mode are solved. A poly-silicon line is replaced with an insulating medium (such as silicon nitride) line by adopting a short process. Multiple times of ion implantation can be skipped (notexecuted), a germanium-sili