Trench gate metal oxide semiconductor field effect transistor and manufacturing method thereof

The invention provides a trench gate metal oxide semiconductor field effect transistor and a manufacturing method thereof. The trench gate metal oxide semiconductor field effect transistor includes asubstrate, a plurality of trench electrode structures, a plurality of insulating structures, and contact pins. The substrate has a plurality of trenches. The trench electrode structures are respectively disposed in the trenches. The insulating structures are arranged in the grooves respectively and located on the groove electrode structures. Each insulating structure comprises an insulating columnand a plurality of gap walls. The top face of the insulating column is higher than the top face of the substrate. The gap walls are adjacent to the insulating column and arranged on the top face of the substrate. The contact pins are arranged in the substrate between the adjacent trenches, and the gap walls of the insulating structures of the adjacent trenches define the positions of the contactpins. 本发明提供一种沟槽式栅极金氧半场效晶体管及