SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

The invention provides a substrate processing apparatus and a method of manufacturing a semiconductor device. When the same film is generated in a first processing module and a second processing module, the quality of the generated film can be the same between the first processing module and the sec...

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Bibliographische Detailangaben
Hauptverfasser: SHIRAKO KENJI, TANIYAMA TOMOSHI
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention provides a substrate processing apparatus and a method of manufacturing a semiconductor device. When the same film is generated in a first processing module and a second processing module, the quality of the generated film can be the same between the first processing module and the second processing module. The substrate processing apparatus includes: a first processing module; a second processing module; a first exhaust box; a second exhaust box; a universal supply box; a first valve group; and a second valve group. In order to generate the same film in the first processing module and the second processing module, processing of substantially the same gas supply sequence is repeated in parallel at staggered times. The staggered times is determined by a method for delaying a gas supply sequence of the other of the first processing module and the second processing module, which begin processing later, so that the supply timing of specific gas among a plurality of types of processing gas does not o