Preparation method of photolithographic layer mask and ion implantation method

The invention provides a preparation method of a photolithographic layer mask and an ion implantation method. The auxiliary pattern is added on a photolithographic layer mask plate above an active region, light intensity distribution of a region above the active region and needing to reduce light transmittance and a surrounding region is changed, so the transmittance of the photolithographic layermask is reduced, intensity of reflected light is weakened, a photolithographic pattern is less influenced or not influenced by stray light, the photolithographic pattern is effectively protected, anda photolithographic process window is effectively increased. 本发明提供了一种光刻层掩膜版的制备方法、离子注入方法，本发明通过在有源区上方的光刻层掩膜版中增加辅助图形，改变了有源区上方需要降低光透过率区域及其周围的光强分布，从而减小光刻层掩膜的透过率，减弱反射光强度，使光刻的图形少受或不受杂光的影响，有效的保护了光刻的图形，使光刻工艺窗口得到有效增加。