Eight-cavity vertical PECVD-PVD integrated device for solar cell manufacturing

The invention relates to an eight-cavity vertical PECVD-PVD integrated device for solar cell manufacturing. A vacuum preheating feeding cavity, an intrinsic amorphous silicon thin film deposition PECVD cavity, a doped amorphous silicon thin film deposition PECVD cavity, a first TCO thin film deposit...

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Bibliographische Detailangaben
Hauptverfasser:	REN DONGLIANG, HUANG HAIBIN, ZHOU LANG, HUANG ZHEN, PENG DEXIANG, LIU CHAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to an eight-cavity vertical PECVD-PVD integrated device for solar cell manufacturing. A vacuum preheating feeding cavity, an intrinsic amorphous silicon thin film deposition PECVD cavity, a doped amorphous silicon thin film deposition PECVD cavity, a first TCO thin film deposition PVD cavity, a second TCO thin film deposition PVD cavity, a third TCO thin film deposition PVD cavity and a discharging cavity are sequentially connected through vacuum locks and provided with vacuum locks end to end. A moving device penetrates through the cavities and the vacuum locks from front to back. A vertical carrier plate is arranged in the vacuum preheating feeding cavity. The vertical carrier plate is arranged on the moving device and is in a state that the vertical carrier plate can move from front to back in the integrated device. A sputtering target is arranged in the second TCO thin film deposition PVD cavity. Each of the cavities is externally connected with an ultra-puregas circuit, a heating sy