Epitaxial structure of semiconductor device, preparation method of epitaxial structure and semiconductor device
The embodiment of the invention discloses an epitaxial structure of a semiconductor device, a preparation method of the epitaxial structure and the semiconductor device. The epitaxial structure of thesemiconductor device comprises a substrate; a buffer layer arranged on one side of the substrate; a...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The embodiment of the invention discloses an epitaxial structure of a semiconductor device, a preparation method of the epitaxial structure and the semiconductor device. The epitaxial structure of thesemiconductor device comprises a substrate; a buffer layer arranged on one side of the substrate; a channel layer arranged on one side, far away from the substrate, of the buffer layer, wherein the doping concentration of carbon atoms in the channel layer is C1, and C1 |
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