7-cavity horizontal PECVD-PVD integrated silicon wafer coating process

The invention relates to a 7-cavity horizontal PECVD-PVD integrated silicon wafer coating process. A vacuum preheating feeding cavity, an intrinsic amorphous silicon film deposition PEVCD cavity, a doped amorphous silicon film deposition PEVCD cavity, first, second and third TCO thin film deposition...

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Bibliographische Detailangaben
Hauptverfasser:	REN DONGLIANG, HUANG HAIBIN, ZHOU LANG, HUANG ZHEN, PENG DEXIANG, LIU CHAO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a 7-cavity horizontal PECVD-PVD integrated silicon wafer coating process. A vacuum preheating feeding cavity, an intrinsic amorphous silicon film deposition PEVCD cavity, a doped amorphous silicon film deposition PEVCD cavity, first, second and third TCO thin film deposition PVD cavities and a discharging cavity are connected in sequence through vacuum locks, the head andthe tail are provided with vacuum locks, a mobile device passes through the cavities and the vacuum locks from front to back, a horizontal carrier plate is arranged in the vacuum preheating feeding cavity, is arranged on the mobile device and is in a movable state in an integrated device from front to back, a sputtering target is arranged in the second TCO thin film deposition PVD cavity, and allthe cavities are externally connected with an ultra-pure gas circuit, a heating system and a vacuum-pumping system. By means of the 7-cavity horizontal PECVD-PVD integrated silicon wafer coating process, the product preparatio