Seven-cavity vertical type HWCVD-PVD integrated silicon wafer coating production process
The invention relates to a seven-cavity vertical type HWCVD-PVD integrated silicon wafer coating production process. A preheating feed cavity, an intrinsic amorphous silicon thin film deposition HWCVDcavity, a doped amorphous silicon thin film deposition HWCVD cavity, first, second and third TCO thi...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a seven-cavity vertical type HWCVD-PVD integrated silicon wafer coating production process. A preheating feed cavity, an intrinsic amorphous silicon thin film deposition HWCVDcavity, a doped amorphous silicon thin film deposition HWCVD cavity, first, second and third TCO thin film deposition PVD cavities and a discharge cavity are connected sequentially through vacuum locks, the head and the tail are provided with the vacuum locks, and a movable device connect all the cavities from front to back in a penetrating mode. A vertical type bearing plate is arranged in the preheating feed cavity, is arranged on the movable device and is in a movable state from front to back in integrated equipment. A sputtering target is arranged in the second TCO thin film deposition PVD cavity. All the cavities are externally connected with a hyperpure gas channel, a heating system and a vacuum-pumping system. Procedures can be effectively prevented from being exposed to air in theproduct preparation proce |
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