Preparation method of LED with localized plasma enhancement effect

The invention discloses a preparation method of a light emitting diode (LED) with a localized plasma enhancement effect. The technological method mainly comprises the steps of firstly, utilizing a nanosphere mask etching technology to etch a corresponding nanometer groove is in a P-GaN layer of the LED; dropwise adding a metal nanoparticle solution matching the light emitting wavelength of the LEDon the surface of the P-GaN layer; uniformly distributing a solution on the surface of the P-GaN layer; depositing metal particles in the nano groove after drying, and then depositing a current isolation layer; and finally removing a related nanosphere mask to fill the metal nano particles and the current isolation layer in the nano groove; and finally manufacturing an electrode by utilizing a conventional process. Results show that the method provided by the invention can be used for effectively preparing the metal nanoparticles matching the light emitting wavelength of the LED near the quantum well of the LED chip.