Method for testing MOSFET

The invention provides a test scheme for a MOSFET. The test scheme comprises the following steps of keeping peripheral connecting lines of a base, a collector and an emitter to a matrix box unchanged,and adjusting a source required by each pin through a Matrix item; adjusting a Matrix channel, and normally testing functions between a first gate and a first source and between a second gate and a second source; setting the first source to zero potential, taking the second source as a first drain electrode, setting an electrical parameter condition, carrying out functional parameter testing on achip, and obtaining a result. According to the method, one part of a source pin of the MOSFET is taken as a drain electrode pin of the other part, the situation that a common double MOSFET chip testscheme cannot be applied to the series of chips is avoided, the test scheme can be used for testing products whose drain electrode pins are internally short-circuited and cannot be led out, the test time is reduced, and the tes