Gas processing apparatus and a gas processing method

The invention provides a gas processing apparatus and a gas processing method. The gas processing apparatus includes: an opposing portion that opposes a mounting portion of a substrate in a vacuum container and includes a plurality of first gas ejection ports; a first diffusion space for the process...

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Bibliographische Detailangaben
Hauptverfasser:	HIROTAKA KUWADA, YU NUNOSHIGE, YASUSHI FUJII, TAKASHI KAMIO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention provides a gas processing apparatus and a gas processing method. The gas processing apparatus includes: an opposing portion that opposes a mounting portion of a substrate in a vacuum container and includes a plurality of first gas ejection ports; a first diffusion space for the process gas, the first diffusion space being provided above the facing portion so as to communicate with each of the first gas ejection ports; a plurality of second gas ejection ports opened in the vertical direction from the top facing the first diffusion space above the first diffusion space; a second diffusion space for the process gas, the second diffusion space being provided above the top so as to communicate with each of the second gas ejection ports; and a plurality of third gas ejection ports,and a plurality of second diffusion spaces that are formed in a row in the circumferential direction of the first diffusion space and communicate with each of the second diffusion spaces, the seconddiffusion spaces being for