Thermionic photoelectric detector based on 8-hydroxyquinoline aluminum/metal heterojunction

The invention relates to the field of photoelectric detector manufacturing and relates to a thermionic photoelectric detector based on an 8-hydroxyquinoline aluminum/metal heterojunction. The detectoris composed of an anode layer, an organic semiconductor layer, a silver nanoparticle layer and a cathode layer, wherein the anode layer is indium tin oxide ITO, the silver nanoparticle layer and thecathode layer form a metal composite electrode layer, and the organic semiconductor layer and the metal composite electrode layer form a Schottky junction. The invention further relates to a preparation method of the thermionic photoelectric detector based on the 8-hydroxyquinoline aluminum/metal heterojunction. The detector is advantaged in that the dark current of the photoelectric detector designed is kept at dozens of picoamperes under the condition of forward bias, and the bright current is in an on state. 本发明涉及光电探测器制作领域，一种基于8-羟基喹啉铝/金属异质结的热电子光电探测器，由阳极层、有机半导体层、银纳米颗粒层、阴极层组成，阳极层为铟锡氧化物ITO，银纳米颗粒层和阴极层构成金属复合电极层，有机半导体层与金属