Self-recovery anti-phase unit structure

The invention relates to a self-recovery anti-phase unit structure, comprising a first PMOS transistor, a second PMOS transistor, a third PMOS transistor, a first NMOS transistor, a second NMOS transistor and a third NMOS transistor. The self-recovery anti-phase unit structure is capable of achievin...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MA LIPING, SHI YUZHE, CHEN KAI, LI SEN, SHAN YONGXIN, ZHANG XIAOYU, YAO JIAQI, CHEN XIN, LIU XIAOYU, ZHANG YING, GAO XIANG, MAO ZHIMING, JIN ZHENGFEI, BAI YUXIN, GE MINGHUI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY PULSE TECHNIQUE
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