High-brightness light emitting diode and manufacturing method thereof

The invention discloses a high-brightness light emitting diode, which includes a semiconductor substrate and a light emitting area. The semiconductor substrate is made of gallium arsenide, and the light emitting area is sequentially composed of a heavily doped GaAs contact layer, an AlGaInP upper coating layer, an AlGaInP active layer, an AlGaInP lower coating layer, an AlAs etching stop layer anda GaAs buffer layer, wherein the GaAs buffer layer contacts the semiconductor substrate. According to the invention, the light emitting diode with a metal coating reflecting a permanent substrate isrealized, and the brightness of the light emitting diode is effectively and reliably ensured. 本发明揭示了一种高亮度发光二极管，发光二极管包括半导体衬底和发光区域，所述半导体衬底为砷化镓材质，所述发光区域依次由重掺杂GaAs接触层、AlGaInP上覆层、AlGaInP活性层、AlGaInP下覆层、AlAs蚀刻停止层和GaAs缓冲层构成，所述GaAs缓冲层接触半导体衬底。本发明实现了一种具有金属涂层反射永久衬底的发光二极管，有效可靠的保证了发光二极管的亮度。