Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell

Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell

The invention provides a method for manufacturing a TOPCon solar cell and an amorphous silicon crystallization method and equipment for the TOPCon solar cell. The crystallization method comprises thefollowing steps: (a) providing a silicon wafer for a TOPCon solar cell, wherein an oxide layer and an...

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1. Verfasser: MA ZHEGUO
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Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator MA ZHEGUO
description The invention provides a method for manufacturing a TOPCon solar cell and an amorphous silicon crystallization method and equipment for the TOPCon solar cell. The crystallization method comprises thefollowing steps: (a) providing a silicon wafer for a TOPCon solar cell, wherein an oxide layer and an amorphous silicon layer are sequentially deposited on the back surface of the silicon wafer; (b) receiving the silicon wafer and performing heat treatment on the silicon wafer at a temperature of 800-950 DEG C for 20-40 minutes so as to crystallize the amorphous silicon layer into a polycrystalline silicon layer; and (c) receiving the silicon wafer and performing cooling heat treatment on the silicon wafer at a reduced temperature of 50-300 DEG C lower than the temperature in the step (c) for1-5 minutes, and performing heat treatment on the silicon wafer at a temperature of 800-1000 DEG C for 10 seconds to 5 minutes after each cooling heat treatment to release stress. According to the invention, amorphous silicon
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The crystallization method comprises thefollowing steps: (a) providing a silicon wafer for a TOPCon solar cell, wherein an oxide layer and an amorphous silicon layer are sequentially deposited on the back surface of the silicon wafer; (b) receiving the silicon wafer and performing heat treatment on the silicon wafer at a temperature of 800-950 DEG C for 20-40 minutes so as to crystallize the amorphous silicon layer into a polycrystalline silicon layer; and (c) receiving the silicon wafer and performing cooling heat treatment on the silicon wafer at a reduced temperature of 50-300 DEG C lower than the temperature in the step (c) for1-5 minutes, and performing heat treatment on the silicon wafer at a temperature of 800-1000 DEG C for 10 seconds to 5 minutes after each cooling heat treatment to release stress. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell
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