Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell

The invention provides a method for manufacturing a TOPCon solar cell and an amorphous silicon crystallization method and equipment for the TOPCon solar cell. The crystallization method comprises thefollowing steps: (a) providing a silicon wafer for a TOPCon solar cell, wherein an oxide layer and an amorphous silicon layer are sequentially deposited on the back surface of the silicon wafer; (b) receiving the silicon wafer and performing heat treatment on the silicon wafer at a temperature of 800-950 DEG C for 20-40 minutes so as to crystallize the amorphous silicon layer into a polycrystalline silicon layer; and (c) receiving the silicon wafer and performing cooling heat treatment on the silicon wafer at a reduced temperature of 50-300 DEG C lower than the temperature in the step (c) for1-5 minutes, and performing heat treatment on the silicon wafer at a temperature of 800-1000 DEG C for 10 seconds to 5 minutes after each cooling heat treatment to release stress. According to the invention, amorphous silicon