Contact hole forming method

The invention relates to a contact hole forming method, and relates to a semiconductor integrated circuit manufacturing technology. A relational expression between the morphology critical dimension change delta D1 of contact holes after photo-etching and the critical dimension change delta D2 of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	DONG XIANGUO
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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