Contact hole forming method

The invention relates to a contact hole forming method, and relates to a semiconductor integrated circuit manufacturing technology. A relational expression between the morphology critical dimension change delta D1 of contact holes after photo-etching and the critical dimension change delta D2 of the contact holes after etching and a relational expression between the thicknesses H of interlayer dielectric layers and the critical dimension D2 of the contact holes after etching are obtained through multiple tests; the relationship between the morphology critical dimensions D1 of the contactholes after photo-etching and the thicknesses H of the interlayer dielectric layers is obtained; the compensation relationship between the exposure intensity and the thicknesses H of the interlayer dielectric layers is obtained according to the relationship between the critical dimensions D1 of the morphologies of the contact holes after photo-etching by a photo-etching machine and the exposure intensity; and the exposure inte