Contact hole forming method
The invention relates to a contact hole forming method, and relates to a semiconductor integrated circuit manufacturing technology. A relational expression between the morphology critical dimension change delta D1 of contact holes after photo-etching and the critical dimension change delta D2 of the...
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| creator | DONG XIANGUO |
| description | The invention relates to a contact hole forming method, and relates to a semiconductor integrated circuit manufacturing technology. A relational expression between the morphology critical dimension change delta D1 of contact holes after photo-etching and the critical dimension change delta D2 of the contact holes after etching and a relational expression between the thicknesses H of interlayer dielectric layers and the critical dimension D2 of the contact holes after etching are obtained through multiple tests; the relationship between the morphology critical dimensions D1 of the contactholes after photo-etching and the thicknesses H of the interlayer dielectric layers is obtained; the compensation relationship between the exposure intensity and the thicknesses H of the interlayer dielectric layers is obtained according to the relationship between the critical dimensions D1 of the morphologies of the contact holes after photo-etching by a photo-etching machine and the exposure intensity; and the exposure inte |
| format | Patent |
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A relational expression between the morphology critical dimension change delta D1 of contact holes after photo-etching and the critical dimension change delta D2 of the contact holes after etching and a relational expression between the thicknesses H of interlayer dielectric layers and the critical dimension D2 of the contact holes after etching are obtained through multiple tests; the relationship between the morphology critical dimensions D1 of the contactholes after photo-etching and the thicknesses H of the interlayer dielectric layers is obtained; the compensation relationship between the exposure intensity and the thicknesses H of the interlayer dielectric layers is obtained according to the relationship between the critical dimensions D1 of the morphologies of the contact holes after photo-etching by a photo-etching machine and the exposure intensity; and the exposure inte</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200207&DB=EPODOC&CC=CN&NR=110767602A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200207&DB=EPODOC&CC=CN&NR=110767602A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DONG XIANGUO</creatorcontrib><title>Contact hole forming method</title><description>The invention relates to a contact hole forming method, and relates to a semiconductor integrated circuit manufacturing technology. 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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | Contact hole forming method |
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