SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM

The invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a recording medium. The invention provided a technique that includes: forming an oxynitride film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a precursor supply part tothe at least one substrate; (b) supplying an oxidizing agent from an oxidizing agent supply part to the at least one substrate; and (c) supplying a nitriding agent from a nitriding agent supply part to the at least one substrate, wherein in (b), an inert gas is supplied from an inert gas supply part, which is different from the oxidizing agent supply part, to the at least one substrate, and at least one of nitrogen concentration and refractive index of the oxynitride film formed on the at least one substrate is adjusted by controlling a flow rate of the inert gas. 本发明涉及衬底处理装置、半导体器件的制造方法及记录介质。要解决的课题为对在衬底上形成的氧氮化膜的氮浓度及折射