Manufacturing method of back field and back passivation layer of P-type crystalline silicon solar cell

The invention discloses a manufacturing method of a back field and a back passivation layer of a P-type crystalline silicon solar cell. The manufacturing method comprises the following steps of forming a stable PN junction on a light receiving surface (front surface) of a P-type solar silicon wafer;...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YI WUXIONG, PAN DINGDING, WANG YIZHE, ZHANG WEI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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