Manufacturing method of back field and back passivation layer of P-type crystalline silicon solar cell

The invention discloses a manufacturing method of a back field and a back passivation layer of a P-type crystalline silicon solar cell. The manufacturing method comprises the following steps of forming a stable PN junction on a light receiving surface (front surface) of a P-type solar silicon wafer; putting the P-type solar silicon wafer into a vacuum environment, and forming a very thin P-typedoped material film layer on a backlight surface (back surface) of the P-type solar silicon wafer; forming an oxide film layer with negative charges on the surface of the P-type doped material film layer; putting the P-type solar silicon wafer into an oxidation furnace, carrying out heat treatment in an oxygen-free environment, and forming a P back field on the back surface of the P-type solarsilicon wafer; continuously heating and annealing in an aerobic environment to form a back passivation layer; and cooling the oxidation furnace, taking out the P-type solar silicon wafer from the oxidation furnace, and coolin