High-voltage p-channel HEMT device

High-voltage p-channel HEMT device

The invention discloses a high-voltage p-channel HEMT device, and belongs to the technical field of a semiconductor power device. In view of relatively high process difficulty in preparation of superjunctions on heterojunction devices such as an HEMT, the invention provides a surface super-junction...

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Hauptverfasser: WEN HOUDONG, MENG SIYUAN, JIANG XUANQING, LUO QIAN
Format: Patent
Sprache:chi ; eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator WEN HOUDONG
MENG SIYUAN
JIANG XUANQING
LUO QIAN
description The invention discloses a high-voltage p-channel HEMT device, and belongs to the technical field of a semiconductor power device. In view of relatively high process difficulty in preparation of superjunctions on heterojunction devices such as an HEMT, the invention provides a surface super-junction structure for a p-channel HEMT device. A comb-finger-shaped n-type semiconductor strip block is prepared on the surface of a drift region of the device, and the n-type semiconductor strip block is electrically connected with a grid electrode, so that large-range depletion of a drift region channelcan be realized under a turn-off condition; and the depletion region can tolerate relatively high voltage, so that the breakdown characteristic of the device is enhanced. On the other hand, since thecomb-finger-shaped n-type surface voltage-withstanding structure connected with the grid electrode only covers a small part of the drift region area, when the device is conducted, the parasitic resistance and the parasitic capa
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In view of relatively high process difficulty in preparation of superjunctions on heterojunction devices such as an HEMT, the invention provides a surface super-junction structure for a p-channel HEMT device. A comb-finger-shaped n-type semiconductor strip block is prepared on the surface of a drift region of the device, and the n-type semiconductor strip block is electrically connected with a grid electrode, so that large-range depletion of a drift region channelcan be realized under a turn-off condition; and the depletion region can tolerate relatively high voltage, so that the breakdown characteristic of the device is enhanced. 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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title High-voltage p-channel HEMT device
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