High-voltage p-channel HEMT device

The invention discloses a high-voltage p-channel HEMT device, and belongs to the technical field of a semiconductor power device. In view of relatively high process difficulty in preparation of superjunctions on heterojunction devices such as an HEMT, the invention provides a surface super-junction structure for a p-channel HEMT device. A comb-finger-shaped n-type semiconductor strip block is prepared on the surface of a drift region of the device, and the n-type semiconductor strip block is electrically connected with a grid electrode, so that large-range depletion of a drift region channelcan be realized under a turn-off condition; and the depletion region can tolerate relatively high voltage, so that the breakdown characteristic of the device is enhanced. On the other hand, since thecomb-finger-shaped n-type surface voltage-withstanding structure connected with the grid electrode only covers a small part of the drift region area, when the device is conducted, the parasitic resistance and the parasitic capa