Texturing additive for diamond wire polycrystalline silicon wafers and texturing etching solution for diamond wire polycrystalline silicon wafers
The invention discloses a texturing additive for diamond wire polycrystalline silicon wafers and a texturing etching liquid using the additive for the polycrystalline silicon wafers. The texturing additive for the diamond wire polycrystalline silicon wafers comprises a low-viscosity low-foam-stabili...
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| creator | YI WUXIONG PAN DINGDING WANG YIZHE ZHANG WEI |
| description | The invention discloses a texturing additive for diamond wire polycrystalline silicon wafers and a texturing etching liquid using the additive for the polycrystalline silicon wafers. The texturing additive for the diamond wire polycrystalline silicon wafers comprises a low-viscosity low-foam-stability component, a high-viscosity high-foam-stability component and deionized water, wherein the low-viscosity low-foam-stability component comprises oxalic acid, tartaric acid, citric acid, a soluble citrate, an isomeric alcohol ether and a quaternary ammonium salt cationic surfactant, and the high-viscosity high-foam-stability component comprises polyethylene glycol, methoxypolyethylene glycol and a gimini quaternary ammonium salt cationic surfactant. By using the texturing additive provided by the invention, the textured microstructure of the diamond wire silicon wafers can be modulated, the reflectivity of the diamond wire polycrystalline silicon wafers is effectively reduced, and the lighttrapping effect is impro |
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The texturing additive for the diamond wire polycrystalline silicon wafers comprises a low-viscosity low-foam-stability component, a high-viscosity high-foam-stability component and deionized water, wherein the low-viscosity low-foam-stability component comprises oxalic acid, tartaric acid, citric acid, a soluble citrate, an isomeric alcohol ether and a quaternary ammonium salt cationic surfactant, and the high-viscosity high-foam-stability component comprises polyethylene glycol, methoxypolyethylene glycol and a gimini quaternary ammonium salt cationic surfactant. By using the texturing additive provided by the invention, the textured microstructure of the diamond wire silicon wafers can be modulated, the reflectivity of the diamond wire polycrystalline silicon wafers is effectively reduced, and the lighttrapping effect is impro</description><language>chi ; eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200103&DB=EPODOC&CC=CN&NR=110644049A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200103&DB=EPODOC&CC=CN&NR=110644049A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YI WUXIONG</creatorcontrib><creatorcontrib>PAN DINGDING</creatorcontrib><creatorcontrib>WANG YIZHE</creatorcontrib><creatorcontrib>ZHANG WEI</creatorcontrib><title>Texturing additive for diamond wire polycrystalline silicon wafers and texturing etching solution for diamond wire polycrystalline silicon wafers</title><description>The invention discloses a texturing additive for diamond wire polycrystalline silicon wafers and a texturing etching liquid using the additive for the polycrystalline silicon wafers. The texturing additive for the diamond wire polycrystalline silicon wafers comprises a low-viscosity low-foam-stability component, a high-viscosity high-foam-stability component and deionized water, wherein the low-viscosity low-foam-stability component comprises oxalic acid, tartaric acid, citric acid, a soluble citrate, an isomeric alcohol ether and a quaternary ammonium salt cationic surfactant, and the high-viscosity high-foam-stability component comprises polyethylene glycol, methoxypolyethylene glycol and a gimini quaternary ammonium salt cationic surfactant. By using the texturing additive provided by the invention, the textured microstructure of the diamond wire silicon wafers can be modulated, the reflectivity of the diamond wire polycrystalline silicon wafers is effectively reduced, and the lighttrapping effect is impro</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqVzLEKwjAQgOEuDqK-w_kAQotBcJSiODl1L0dy0YM0CcnV2sfwja0gzjr9y8c_L54NPaRP7K-AxrDwncCGBIaxC97AwIkgBjfqNGZB59gTZHasg4cBLaUMODn5bkj07d0cXC88qT93y2Jm0WVafboo1qdjU583FENLOaImT9LWl6oqd0qVan_Y_mJeHjtRpA</recordid><startdate>20200103</startdate><enddate>20200103</enddate><creator>YI WUXIONG</creator><creator>PAN DINGDING</creator><creator>WANG YIZHE</creator><creator>ZHANG WEI</creator><scope>EVB</scope></search><sort><creationdate>20200103</creationdate><title>Texturing additive for diamond wire polycrystalline silicon wafers and texturing etching solution for diamond wire polycrystalline silicon wafers</title><author>YI WUXIONG ; PAN DINGDING ; WANG YIZHE ; ZHANG WEI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110644049A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2020</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>YI WUXIONG</creatorcontrib><creatorcontrib>PAN DINGDING</creatorcontrib><creatorcontrib>WANG YIZHE</creatorcontrib><creatorcontrib>ZHANG WEI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YI WUXIONG</au><au>PAN DINGDING</au><au>WANG YIZHE</au><au>ZHANG WEI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Texturing additive for diamond wire polycrystalline silicon wafers and texturing etching solution for diamond wire polycrystalline silicon wafers</title><date>2020-01-03</date><risdate>2020</risdate><abstract>The invention discloses a texturing additive for diamond wire polycrystalline silicon wafers and a texturing etching liquid using the additive for the polycrystalline silicon wafers. The texturing additive for the diamond wire polycrystalline silicon wafers comprises a low-viscosity low-foam-stability component, a high-viscosity high-foam-stability component and deionized water, wherein the low-viscosity low-foam-stability component comprises oxalic acid, tartaric acid, citric acid, a soluble citrate, an isomeric alcohol ether and a quaternary ammonium salt cationic surfactant, and the high-viscosity high-foam-stability component comprises polyethylene glycol, methoxypolyethylene glycol and a gimini quaternary ammonium salt cationic surfactant. By using the texturing additive provided by the invention, the textured microstructure of the diamond wire silicon wafers can be modulated, the reflectivity of the diamond wire polycrystalline silicon wafers is effectively reduced, and the lighttrapping effect is impro</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Texturing additive for diamond wire polycrystalline silicon wafers and texturing etching solution for diamond wire polycrystalline silicon wafers |
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