Memory array and a method of manufacturing the same

The present invention relates to a memory array and a method of manufacturing the same. The memory array is disclosed and includes a semiconductor substrate having a plurality of active areas and trench isolation regions among the plurality of active areas, with the active areas extending along a first direction; a plurality of buried word lines extending along a second direction and disposed in the semiconductor substrate, with each active area intersecting with two buried word lines so as to divide each active area into three parts including a digit line contact area and two cell contact areas; and the second direction being not perpendicular to the first direction; a plurality of buried digit lines extending along the third direction, disposed in the semiconductor substrate and above the buried word lines, with the third direction being perpendicular to the second direction and an epitaxial silicon layer extending from exposed sidewalls and a top surface of each of the cell contactareas. 本申请涉及一种存储器阵列及其制造方法