ICPMS test method and ICPMS scanning platform
The invention discloses an ICPMS test method and an ICPMS scanning platform. The method comprises steps of etching a silicon wafer, fixing the etched silicon wafer on the ICPMS scanning platform, making VPD liquid drops roll on a surface of the silicon wafer, collecting metal components on the surfa...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses an ICPMS test method and an ICPMS scanning platform. The method comprises steps of etching a silicon wafer, fixing the etched silicon wafer on the ICPMS scanning platform, making VPD liquid drops roll on a surface of the silicon wafer, collecting metal components on the surface of the silicon wafer, reducing residues of the VPD liquid drops on the surface of the silicon wafer by inclining the silicon wafer through gravity of the VPD liquid drops, atomizing the VPD liquid drops, then carrying out spectral analysis, and obtaining the content of the metal components of theVPD liquid drops through calculation. In the ICPMS test process, when the VPD liquid drops are made to roll on the surface of the silicon wafer to collect the metal components on the surface of the silicon wafer, residues of the VPD liquid drops on the surface of the silicon wafer are reduced by inclining the silicon wafer through the gravity of the VPD liquid drops, and accuracy and stability ofthe ICPMS test result are |
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