NANOWIRE TRANSISTOR STRUCTURE AND METHOD OF SHAPING

The present invention provides a nanowire transistor structure and a method of shaping. The nanowire device includes one or more nanowires having a first end portion, a second end portion, and a bodyportion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the secondend portion. The body portion of the nanowire has a first cross-sectional shape, and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integratedcircuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed. 纳米线晶体管结构和成形的方法。纳米线器件包括一个或多个纳米线，所述一个或多个纳米线具有第一端部、第二端部和位于第一端部与第二端部之间的主体部分。第一导电结构与第一端部接触并且第二导电结构与第二端部接触。纳米线的主体部分具有第一横截面形状，并且第一端部具有与第一横截面形状不同的第二横截面形状。还公开了包括纳米线器件的集成电路和清洁半导体结构的方法。