Resistive random access memory device, writing method, erasing method and reading method of resistive random access memory device

The invention discloses a resistive random access memory device. The device comprises a field effect transistor, a bit line, a word line and a source line; the drain of the field effect transistor isconnected with the bit line; the grid of the field effect transistor is connected with the word line; the source of the field effect transistor is connected with the source line; the bit line comprises a plurality of dielectric layers, a lower electrode and an upper electrode which are arranged from bottom to top; a metal layer is clamped between every two adjacent dielectric layers; a plurality of resistive layers which are connected in parallel are arranged in the dielectric layers between the upper electrode and the lower electrode; and the upper end and lower end of each resistive layer are connected to the upper electrode and the lower electrode respectively; and a metal plug is arranged in each of the rest dielectric layers. According to the resistive random access memory device of the invention, the read cu