Regrowth method for reducing interface state of HEMT device by utilizing InN protection layer and HEMT device

The invention discloses a regrowth method for reducing an interface state of an HEMT device by utilizing an InN protection layer. After the AlGaN/GaN HEMT structure is grown, an InN protection layer is formed through in-situ epitaxy, when a p-GaN gate structure is regrown by adopting MOCVD, the InN protective layer is evaporated at a high temperature in a growth system, and then the p-GaN layer isextended, so C and O impurity pollution caused by exposure of AlGaN in the air is avoided, and the interface state density of p-GaN/AlGaN can be effectively reduced. When the HEMT device is preparedby the method, the p-GaN layer does not need to be etched, so high source-drain contact resistance or interface damage caused by the fact that the etching depth of the p-GaN layer cannot be accuratelycontrolled in a source-drain region in a traditional method is avoided. 本发明公开了一种利用InN保护层降低HEMT器件界面态的再生长方法，在生长完AlGaN/GaN HEMT结构后原位再外延一层InN保护层，当采用MOCVD再生长p-GaN栅结构时在生长系统中先将InN保护层高温蒸发掉，再外延p-GaN层，这种方法避免了AlGaN因暴露于空气中导致的C和O杂质污染，能有效降低