BIS(DIAZADIENE)COBALT COMPOUNDS, METHOD OF MAKING AND METHOD OF USE THEREOF

Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are bis(diazadiene)cobalt compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicates; silicon, silicon oxide and silicon nitride. Alkylated diazadiene ligands are used to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance. 本文描述了钴化合物、用于制备钴化合物的方法、用作沉积含钴膜(例如，钴、氧化钴、氮化钴、硅化钴等)的前体的钴化合物和钴膜。钴前体化合物的实例是双(二氮杂二烯)钴化合物。用于沉积含金属膜的表面的实例包括但不限于金属、金属氧化物、金属氮化物和金属硅酸盐；硅、氧化硅和氮化硅。烷基化二氮杂二烯配体用于形成钴配合物，其用于在某些表面上的选择性沉积和/或优异的膜性质，例如均匀性、连续性和低电阻。