SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

A method for manufacturing a semiconductor device includes forming a gate insulation film and a polysilicon layer on a substrate, forming a polysilicon pattern by etching the polysilicon layer, forming an opening in the polysilicon pattern that exposes a part of the polysilicon pattern by forming a mask pattern on the polysilicon pattern, forming a gate electrode by etching the part of the polysilicon pattern exposed through the opening, forming a P-type body region by ion implanting a P-type dopant onto the substrate using the gate electrode as a mask, forming an N-type LDD region on the P-type body region by ion implanting an N-type dopant onto the substrate using the gate electrode as a mask, forming a spacer on a side surface of the gate electrode, and forming an N-type source region on a side surface of the spacer. 本公开内容涉及半导体器件及用于制造半导体器件的方法。用于制造半导体器件的方法包括：在基板上形成栅极绝缘膜和多晶硅层；通过蚀刻多晶硅层来形成多晶硅图案；通过在多晶硅图案上形成掩模图案来在多晶硅图案上形成暴露多晶硅图案的一部分的开口；通过蚀刻经由开口暴露的多晶硅图案的所述一部分来形成栅电极；通过使用栅电极作为掩模将P型掺杂剂离子注入至基板上来形成P型体区；通过使用栅电极作为掩模将N型掺