Method of driving storage device

The invention discloses a method of driving a storage device. The driving method comprises following steps: in a controller of a storage device, according to the threshold voltage shift of a NAND flash memory unit in a block in each degradation maintaining step, loading a look-up table, which is composed of a first read reference voltage and second read reference voltages corresponding to the change of threshold voltages of each page group of the block; and in the controller, using first read reference voltage of the current degradation step of each block of multiple blocks, and at least one read reference voltage of second read reference voltages to execute the read operation until each block finishes the read pass. 本发明的存储设备的驱动方法包括以下步骤：在存储设备的控制器中，根据一个块内的NAND闪存单元的每个保持劣化步骤的阈值电压移位，加载由第一读取基准电压和与一个块内的每个页面组的阈值电压变动对应的第二读取基准电压组成的查找表；在控制器中，使用属于多个块内的每个块的当前劣化步骤的第一读取基准电压和第二读取基准电压中的至少一个读取基准电压，执行读取操作直到每个块均完成读取过程(read pass)。