LITHOGRAPHIC OVERLAY CORRECTION AND LITHOGRAPHIC PROCESS

The invention relates to lithographic overlay correction and lithographic process. According to some embodiments, a method includes receiving a wafer, defining a plurality of zones over the wafer, performing a multi-zone alignment compensation for each of the plurality of zones according to an equation along a first direction, and performing a wafer alignment and a lithography exposure for each ofthe plurality of zones according to the plurality of compensation values. The wafer alignment and the lithography exposure are performed zone-by-zone. 本发明的一些实施例揭露光刻叠对校正以及光刻工艺。根据本发明的一些实施例，一种方法包含：接收晶片；在所述晶片上方界定多个区；沿着第一方向，根据一方程式针对所述多个区的各者执行多区对准补偿；及根据所述多个补偿值，针对所述多个区的各者执行晶片对准及光刻曝光。逐区执行所述晶片对准及所述光刻曝光。