Semiconductor laser diode and method for producing semiconductor laser diode
The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor lay...
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Format: | Patent |
Sprache: | chi ; eng |
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