Semiconductor laser diode and method for producing semiconductor laser diode
The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor lay...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor layer sequence (2). Furthermore, a method for producing a semiconductor laser diode (100) is disclosed.
提出一种半导体激光二极管(100)，其具有：通过外延法制造的半导体层序列(2)，其具有至少一个有源层(3)，其中在所述半导体层序列(2)的至少一个表面区域(20)上设置有含镓的钝化层(10)。此外，提出一种用于制造半导体激光二极管(100)的方法。 |
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