Semiconductor laser diode and method for producing semiconductor laser diode
The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor lay...
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| creator | LELL ALFRED TAEGER SEBASTIAN |
| description | The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor layer sequence (2). Furthermore, a method for producing a semiconductor laser diode (100) is disclosed.
提出一种半导体激光二极管(100)，其具有：通过外延法制造的半导体层序列(2)，其具有至少一个有源层(3)，其中在所述半导体层序列(2)的至少一个表面区域(20)上设置有含镓的钝化层(10)。此外，提出一种用于制造半导体激光二极管(100)的方法。 |
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提出一种半导体激光二极管(100)，其具有：通过外延法制造的半导体层序列(2)，其具有至少一个有源层(3)，其中在所述半导体层序列(2)的至少一个表面区域(20)上设置有含镓的钝化层(10)。此外，提出一种用于制造半导体激光二极管(100)的方法。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES USING STIMULATED EMISSION ; ELECTRICITY</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191203&DB=EPODOC&CC=CN&NR=110537303A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20191203&DB=EPODOC&CC=CN&NR=110537303A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LELL ALFRED</creatorcontrib><creatorcontrib>TAEGER SEBASTIAN</creatorcontrib><title>Semiconductor laser diode and method for producing semiconductor laser diode</title><description>The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor layer sequence (2). Furthermore, a method for producing a semiconductor laser diode (100) is disclosed.
提出一种半导体激光二极管(100)，其具有：通过外延法制造的半导体层序列(2)，其具有至少一个有源层(3)，其中在所述半导体层序列(2)的至少一个表面区域(20)上设置有含镓的钝化层(10)。此外，提出一种用于制造半导体激光二极管(100)的方法。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DEVICES USING STIMULATED EMISSION</subject><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAJTs3NTM7PSylNLskvUshJLE4tUkjJzE9JVUjMS1HITS3JyE9RSANKFRTlAxVl5qUrFOPSwsPAmpaYU5zKC6W5GRTdXEOcPXRTC_LjU4sLEpNT81JL4p39DA0NTI3NjQ2MHY2JUQMAytI2HQ</recordid><startdate>20191203</startdate><enddate>20191203</enddate><creator>LELL ALFRED</creator><creator>TAEGER SEBASTIAN</creator><scope>EVB</scope></search><sort><creationdate>20191203</creationdate><title>Semiconductor laser diode and method for producing semiconductor laser diode</title><author>LELL ALFRED ; TAEGER SEBASTIAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN110537303A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DEVICES USING STIMULATED EMISSION</topic><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>LELL ALFRED</creatorcontrib><creatorcontrib>TAEGER SEBASTIAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LELL ALFRED</au><au>TAEGER SEBASTIAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor laser diode and method for producing semiconductor laser diode</title><date>2019-12-03</date><risdate>2019</risdate><abstract>The invention relates to a semiconductor laser diode (100) which comprises a semiconductor layer sequence (2) produced by an epitaxial method with at least one active layer (3), wherein a gallium-containing passivation layer (10) is arranged on at least one surface area (20) of the semiconductor layer sequence (2). Furthermore, a method for producing a semiconductor laser diode (100) is disclosed.
提出一种半导体激光二极管(100)，其具有：通过外延法制造的半导体层序列(2)，其具有至少一个有源层(3)，其中在所述半导体层序列(2)的至少一个表面区域(20)上设置有含镓的钝化层(10)。此外，提出一种用于制造半导体激光二极管(100)的方法。</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRICITY |
| title | Semiconductor laser diode and method for producing semiconductor laser diode |
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